Boron-Doped Single Crystal Diamond (MPCVD)
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Boron-doped single crystalline diamond plates synthesized via Chemical Vapor Deposition (CVD), offering tunable electrical properties from semiconducting to highly conductive regimes while maintaining diamond’s superior thermal conductivity, hardness, and chemical stability.
| Parameter | Specification |
|---|---|
| Lateral Size | 2 × 2 mm² to 10 × 10 mm² |
| Standard Sizes | 4 × 4 × 0.3 mm / 5 × 5 × 0.3 mm |
| Thickness | ~300 μm (substrate), customizable |
| Surface Roughness (Ra) | ≤ 2 nm |
| Crystal Type | Single Crystal |
| Orientation | (100) typical (customizable) |
| Property | Lightly Doped | Heavily Doped |
|---|---|---|
| Boron Concentration | 1×10¹⁵ – 1×10¹⁷ cm⁻³ | 1×10¹⁸ – 1×10²⁰ cm⁻³ |
| Doped Layer Thickness | ≤ 300 μm | ≤ 50 μm |
| Electrical Resistivity | 10³ – 10⁶ Ω·cm | 10⁻² – 10² Ω·cm |
| Carrier Type | p-type | p-type (degenerate possible) |
| Hole Mobility | 10 – 1000 cm²·V⁻¹·s⁻¹ | 1 – 10 cm²·V⁻¹·s⁻¹ |
Conductivity Range: Tunable from insulating to quasi-metallic
Carrier Transport: Temperature-dependent, reduced mobility at high doping levels
Thermal Conductivity: Up to ~2000 W/m·K (reduced with heavy doping)
Breakdown Field: >10 MV/cm
Optical-grade polishing available
Low defect density
High thickness uniformity (±10 μm typical across wafer)
Excellent surface planarity
| Size | Doping | Quantity Example |
|---|---|---|
| 4 × 4 × 0.3 mm | B (1E17, ~3 μm doped layer) | 5 pcs |
| 4 × 4 × 0.3 mm | B (1E20) | 5 pcs |
| 5 × 5 × 0.3 mm | B (1E20) | 5 pc |
Wide tunability of electrical properties via boron doping
Exceptional thermal management capability
High chemical and radiation resistance
Compatible with microfabrication and electronic device processing
High-power electronics
Electrochemical electrodes (BDD electrodes)
Heat spreaders with electrical functionality
Quantum and semiconductor research
Radiation detectors
Individually packed in anti-static protective crystal boxes
Cleanroom-compatible packaging
Standard shipping batches available
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