DIASEMI CVD Diamond Heatspeader General Specification
| DIASEMI CVD Diamond Heatspeader General Specification |
|
| Category | Parameter | Electronic Device Packaging | High-Power Laser Packaging |
| Thermal Performance | Thermal Conductivity | ≥1000 W/(m·K) | ≥1200 W/(m·K); premium 1500–1800 |
| CTE | ~1.0 ppm/K | ~1.0 ppm/K |
| Thermal Diffusivity | High | Extremely critical |
| Electrical | Volume Resistivity | ≥1×10^12 Ω·m | ≥1×10^12 Ω·m |
| Dielectric Strength | High insulation | High insulation |
| Surface | Surface Roughness (Ra) | Grade1 ≤1 nm; Grade2 1–10 nm; Grade3 10–30 nm | Typically ≤2–5 nm; Wafer bonding ≤1 nm |
| Surface Defects | No scratches/pits/cracks | Optical-grade surface |
| Dimensions | Thickness Tolerance | ±0.01 mm | ±0.01 mm |
| Length/Diameter Tolerance | ±0.05 mm | ±0.05 mm |
| TTV | ≤5 μm | ≤5 μm (often tighter) |
| Flatness | ≤5 μm | ≤5 μm |
| Bow/Warp | ≤4 μm/cm; 2in<10 μm | ≤4 μm/cm; 2in<10 μm |
| Edge Chamfer | ≤0.1 mm | ≤0.1 mm |
| Metallization | Ti | 0.10±0.02 μm | 0.10±0.02 μm |
| Cu | 75±10 μm | 75±10 μm |
| Ni | ≥1 μm | ≥1 μm |
| Au | ≥0.5 μm | ≥0.5 μm |
| AuSn | Optional | 5±1 μm; Au:Sn=75:25 ±5 wt% |
| Qualification | Adhesion | 3M610 tape; no peeling | Same |
| Die Shear | >2.5 N | >2.5 N |
| Wire Bond Pull | >0.18 N | >0.18 N |
| Reliability | High Temp | 350°C 5 min | Same |
| 85/85 | 85°C/85%RH/72 h | Same |
| Temp Cycling | -55~150°C 1000 cycles | Same |
| HTOL | 125–150°C/1000 h | Usually required |
| Standards | JEDEC | JESD22 | JESD22 |
| AEC | AEC-Q101 (optional) | Occasionally |
| MIL | Application dependent | Frequently |
| Telcordia | Optional | GR-468 common |
| Applications | Typical | GaN, SiC, RF, AI, LEDs | LD, VCSEL, Fiber, DPSS, PIC |
