Diamond and SiC Composite Material

Applications

Diamond and SiC Composite Material

Diamond-reinforced silicon carbide (Diamond/SiC) composites have emerged as a highly promising class of materials for thermal management in high-power and high-density electronic packaging systems. Among various fabrication routes, pressureless silicon vapor infiltration (PSVI) stands out for its simplicity, scalability, and ability to produce high-density composites without the need for external pressure. 

Recent studies have elucidated a three-stage densification mechanism in PSVI: initial Si–C reaction at the diamond surface, pore filling by SiC formation, and final densification via nanowire growth.

These mechanisms are primarily driven by molecular motion and capillary forces. Notably, composites with 60 vol.% diamond exhibit exceptional thermal conductivity up to 536 W/m·K and a thermal expansion coefficient closely matched to silicon substrates. Compared with traditional methods such as hot-press sintering or precursor conversion, PSVI offers a superior balance of thermal, mechanical, and process advantages.