Unleash the infinity :GaN-on-Diamond:

Unleash the infinity :GaN-on-Diamond: 

Traditional semiconductors face a hard limit: heat. Even GaN on SiC, today’s industry standard, is constrained by thermal resistance.

GaN-on-Diamond changes the equation. By combining GaN’s superior electron mobility with diamond’s record thermal conductivity (2,000 W/m·K vs. 400 W/m·K for SiC), we deliver devices that run cooler, faster, and longer.

Key technical advantages:
✅ 3–5× lower thermal resistance vs. GaN-on-SiC
✅ 2× higher RF power density (10–15 W/mm demonstrated)
✅ Operation at >300 °C channel temperature without degradation
✅ Improved mean-time-to-failure (MTTF) in high-power RF devices

Application impact:
🔸 5G & 6G: supports higher frequencies and massive MIMO without thermal throttling
🔸 Radar & defense: 2× power per aperture, reduced cooling requirements
🔸 Satellite & aerospace: lighter thermal management systems, extended mission lifetimes
🔸 High-power electronics: efficiency gains where every watt counts
🔸 Medical & imaging: stable performance under continuous high load

With GaN-on-SiC, power scaling has plateaued. GaN-on-Diamond unlocks the next order of magnitude.

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