β-Ga₂O₃ thin films on polycrystalline diamond substrates

Diasemi demonstrates the van der Waals epitaxy of β-Ga₂O₃ thin films on polycrystalline diamond substrates using mist chemical vapor deposition (CVD), underscoring its leadership in diamond-based semiconductor research. Diamond, with its ultrahigh thermal conductivity (>2000 W·m⁻¹·K⁻¹), is uniquely suited for thermal management in high-power electronics, yet heteroepitaxy of functional semiconductors on diamond has remained a longstanding challenge due to lattice mismatch, surface roughness, and nonpolar bonding. Leveraging a van der Waals growth mechanism, Diasemi achieved uniform β-Ga₂O₃ films directly on as-polished diamond without buffer layers or complex surface treatments.

Comprehensive structural characterization confirmed phase-pure monoclinic β-Ga₂O₃ with preferential orientation and atomically sharp film/substrate interfaces. Electrical testing of β-Ga₂O₃/diamond heterojunctions revealed rectifying I–V characteristics with low leakage, demonstrating functional device integration. Compared with conventional β-Ga₂O₃ growth on sapphire or SiC, the β-Ga₂O₃/diamond platform delivers superior thermal performance, enabling higher power density and enhanced device reliability.

Through this work, Diasemi establishes mist-CVD as a scalable and cost-effective route for fabricating β-Ga₂O₃/diamond heterostructures. This achievement reinforces Diasemi’s commitment to advancing diamond-enabled semiconductor technologies and paves the way toward next-generation high-power, high-frequency, and thermally robust electronic devices.