GaN on Diamond Wafer

GaN-on-Diamond Wafers for High-Power Applications

GaN-on-diamond wafers are advanced heterostructures formed by depositing a thin layer of gallium nitride (GaN) onto a diamond substrate, typically via metal-organic chemical vapor deposition (MOCVD). This combination merges the high electron mobility of GaN with the exceptional thermal conductivity of diamond, offering superior performance for next-generation power electronics.

Why GaN-on-Diamond?

• Outstanding Thermal Management
  Diamond’s thermal conductivity (1000–2000 W/m·K) is several times higher than copper, enabling efficient heat dissipation in high-power devices.

• High Power & Frequency Capability
  GaN provides fast switching speeds and high breakdown voltage, making it ideal for RF amplifiers and power conversion systems.

• High-Temperature Operation
  The wide bandgap of GaN and diamond allows reliable performance in extreme environments, such as aerospace, automotive, and industrial sectors.

Our Diamond Substrate Solutions

We offer thermal-grade polycrystalline CVD diamond substrates engineered for efficient heat sinking in temperature-sensitive devices, including:

• Power electronics

• Laser diodes

• Photonic sensors

We also provide wafer-grade polished diamond substrates with sub-nanometer RMS surface roughness, suitable for:

• Direct bonding or epitaxial growth of GaN, Ga₂O₃, and AlN

• High-quality device fabrication

Key Properties of CVD Diamond

• ✔ Ultra-high thermal conductivity (1000–2000 W/m·K)

• ✔ Extreme hardness and mechanical stability

• ✔ Broad optical transparency range (UV to IR)

• ✔ Excellent chemical resistance

• ✔ High thermal stability (graphitizes above 700 °C in air, 1500 °C in inert gas)