Ion-Implantation, Epilayer Growth, and Lift-Off of High-Quality Diamond Films

Ion-Implantation, Epilayer Growth, and Lift-Off of High-Quality Diamond Films

The development of high-quality diamond films is pivotal for driving advances in quantum technology, power electronics, and thermal management. The ion implantation and lift-off technique has emerged as a crucial method for fabricating diamond films with controlled thickness and scalable production of large-area diamond wafers. This study advances the understanding of critical interface dynamics during diamond epilayer growth on ion-implanted commercial diamond substrates. Leveraging high-resolution cross-sectional electron microscopy and spectroscopic analyses, the direct transformation of the damaged diamond layer is revealed into a graphitic layer during epilayer overgrowth, eliminating the need for high-temperature annealing. Raman and photoluminescence spectroscopy mappings along the side section highlight the exceptional quality and purity of the epilayer, showcasing nitrogen-vacancy center densities comparable to electronic-grade diamond, making it highly suitable for quantum and electronic applications. Finally, the epilayer detaches efficiently via electrochemical etching, leaving a substrate with low surface roughness that is reusable for multiple growth cycles. These results provide valuable insights into refining the ion implantation and lift-off process, bridging critical gaps in interface evolution, and establishing a foundation for sustainable, high-performance diamond films across diverse technological applications.

Sources

https://advanced.onlinelibrary.wiley.com/doi/10.1002/adfm.202423174